TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx?
ActiveArray?
Bottomless?
CoolFET?
FAST ?
FASTr?
FPS?
FRFET?
ISOPLANAR?
LittleFET?
MICROCOUPLER?
MicroFET?
Power247?
PowerSaver?
PowerTrench ?
QFET ?
SuperFET?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
CROSSVOLT ? GlobalOptoisolator?
DOME? GTO?
MicroPak?
MICROWIRE?
QS?
QT Optoelectronics?
SyncFET?
TinyLogic ?
EcoSPARK?
E 2 CMOS?
HiSeC?
I 2 C?
MSX?
MSXPro?
Quiet Series?
RapidConfigure?
TINYOPTO?
TruTranslation?
EnSigna? i-Lo ?
FACT? ImpliedDisconnect?
FACT Quiet Series?
OCX?
OCXPro?
OPTOLOGIC ?
RapidConnect?
μ SerDes?
SILENT SWITCHER ?
UHC?
UltraFET ?
VCX?
The Power Franchise ?
Programmable Active Droop?
Across the board. Around the world.? OPTOPLANAR?
PACMAN?
POP?
SMART START?
SPM?
Stealth?
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative or
In Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
相关PDF资料
SI3458BDV-T1-GE3 MOSFET N-CH 60V 4.1A 6-TSOP
SI3460BDV-T1-GE3 MOSFET N-CH 20V 8A 6-TSOP
SI3460DV-T1-E3 MOSFET N-CH 20V 5.1A 6TSOP
SI3464DV-T1-GE3 MOSFET N-CH D-S 20V 6-TSOP
SI3467DV-T1-GE3 MOSFET P-CH 20V 3.8A 6-TSOP
SI3473DV-T1-GE3 MOSFET P-CH D-S 12V 6-TSOP
SI3483DV-T1-GE3 MOSFET P-CH D-S 30V 6-TSOP
SI3495DV-T1-GE3 MOSFET P-CH 20V 5.3A 6-TSOP
相关代理商/技术参数
SI3457DV_Q 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV-T1 功能描述:MOSFET 30V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV-T1-E3 功能描述:MOSFET 30V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3458-B01-IM 制造商:Silicon Laboratories Inc 功能描述:POWER OVER ETHERNET CHIP QFN 56PIN 8X8MM - Bulk
SI3458BDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
SI3458BDV_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
SI3458BDV-T1-E3 功能描述:MOSFET 60V 4.1A 3.3W 100mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3458BDV-T1-E3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 60V 4.1A TSOP